1Rectifier Device Data
C0065C0120C0105C0097C0108 C0076C0101C0097C0100 C0082C0101C0099C0116C0105C0102C0105C0101C0114C0115
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low–voltage, high–frequency inverters, free
wheeling diodes, and polarity protection diodes.
• Extremely Low v
F
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 1000 per bag.
• Available Tape and Reeled, 5000 per reel, by adding a “RL” suffix to the
part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: 1N5817, 1N5818, 1N5819
MAXIMUM RATINGS
Rating Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 30 40 V
Non–Repetitive Peak Reverse Voltage V
RSM
24 36 48 V
RMS Reverse Voltage V
R(RMS)
14 21 28 V
Average Rectified Forward Current (2)
(V
R(equiv)
≤ 0.2 V
R
(dc), T
L
= 90°C,
R
θJA
= 80°C/W, P.C. Board Mounting, see Note 2, T
A
= 55°C)
I
O
1.0 A
Ambient Temperature (Rated V
R
(dc), P
F(AV)
= 0, R
θJA
= 80°C/W) T
A
85 80 75 °C
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, half–wave, single phase 60 Hz,
T
L
= 70°C)
I
FSM
25 (for one cycle) A
Operating and Storage Junction Temperature Range (Reverse Voltage applied) T
J
, T
stg
–65 to +125 °C
Peak Operating Junction Temperature (Forward Current applied) T
J(pk)
150 °C
THERMAL CHARACTERISTICS (2)
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
θJA
80 °C/W
ELECTRICAL CHARACTERISTICS (T
L
= 25°C unless otherwise noted) (2)
Characteristic Symbol 1N5817 1N5818 1N5819 Unit
Maximum Instantaneous Forward Voltage (1) (i
F
= 0.1 A)
(i
F
= 1.0 A)
(i
F
= 3.0 A)
v
F
0.32
0.45
0.75
0.33
0.55
0.875
0.34
0.6
0.9
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1) (T
L
= 25°C)
(T
L
= 100°C)
I
R
1.0
10
1.0
10
1.0
10
mA
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
Preferred devices are Motorola recommended choices for future use and best overall value.
 Motorola, Inc. 1996
Order this document
by 1N5817/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0049C0078C0053C0056C0049C0055
C0049C0078C0053C0056C0049C0056
C0049C0078C0053C0056C0049C0057
SCHOTTKY BARRIER
RECTIFIERS
1 AMPERE
20, 30 and 40 VOLTS
CASE 59–04
1N5817 and 1N5819 are
Motorola Preferred Devices
Rev 3