EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

1N5711

器件描述:SCHOTTKY BARRIER SWITCHING DIODE
器件厂商:DIODES [Diodes Incorporated]
厂商主页:http://www.diodes.com/
文件大小:49.52KB,共2页
Sponsor by e络盟
器件资料摘要:
DS11011 Rev. F-2 1of 2 1N5711
1N5711
SCHOTTKY BARRIER SWITCHING DIODE
Features
c183 Ultra-Fast Switching Speed
c183 High Reverse Breakdown Voltage
c183 Low Forward Voltage Drop
c183 Guard Ring Junction Protection
c183 Case: DO-35, Glass
c183 Leads: Solderable per MIL-STD-202,
Method 208
c183 Marking: Type Number
c183 Polarity: Cathode Band
c183 Weight: 0.13 grams (approx.)
Mechanical Data
Maximum Ratings
@ T
A
= 25c176C unless otherwise specified
Notes: 1. Valid provided that leads are kept at ambient temperature.
2. Short duration test pulse used to minimize self-heating effect.
Electrical Characteristics
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol 1N5711 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
70 V
RMS Reverse Voltage VR(RMS) 49 V
Forward Continuous Current IFM 15 mA
Power Dissipation (Note 1) Pd 400 mW
Thermal Resistance, Junction to Ambient Air (Note 1) Rc113JA 300 c176C/W
Operating Temperature Range Tj -55 to +125 c176C
Storage Temperature Range TSTG -55 to +150 c176C
A AB
C
D
DO-35
Dim Min Max
A 25.40 c190
B c190 4.00
C c190 0.60
D c190 2.00
All Dimensions in mm
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 2) V(BR)R 70 c190 VI
R
= 10c109A
Reverse Leakage Current (Note 2) IR c190 200 nA VR= 50V
Forward Voltage Drop (Note 2) VF c190
0.41
1.00
V
I
F
= 1.0mA
I
F
= 15mA
Junction Capacitance Cj c190 2.0 pF VR= 0V, f = 1.0MHz
Reverse Recovery Time trr c190 1.0 ns
I
F
= I
R
= 5.0mA,
I
rr
= 0.1 x I
R
,R
L
= 100c87