10/6/00
1N5711 and 1N6263
Schottky Diodes
Features
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring. The low for-
ward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low
logic level applications.
• This diode is also available in the MiniMELF case
with type designation LL5711 and LL6263.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Peak Inverse Voltage
1N5711
VRRM
70
V
1N6263 60
Power Dissipation (Infinite Heatsink) Ptot 400
(1)
mW
Maximum Single Cycle Surge 10 m s Square Wave IFSM 2.0 A
Thermal Resistance Junction to Ambient Air RQ JA 0.3
(1)
°C/mW
Junction Temperature Tj 125
(1)
C
Storage Temperature Range TS –55 to +150
(1)
C
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Reverse Breakdown Voltage
1N5711
V(BR)R IR = 10m A
70 — —
V
1N6263 60 — —
Leakage Current IR VR = 50V — — 200 nA
Forward Voltage Drop VF
IF = 1mA — — 0.41
V
IF = 15mA — — 1.0
Junction Capacitance Ctot VR = 0V, f = 1MHz — — 2.2 pF
Reverse Recovery Time trr
IF = IR = 5mA,
—— 1 ns
recover to 0.1IR
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
DO-204AH (DO-35 Glass)
Dimensions in inches
and (millimeters)