® 1N 5711
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection
and pulse application with broad dynamic range.
Matched batches are available on request.
August 1999 Ed: 1A
DO 35
(Glass)
Symbol Parameter Value Unit
V
RRM
Repetitive Peak Reverse Voltage 70 V
I
F
Forward Continuous Current* T
a
= 25

°C 15 mA
P
tot
Power Dissipation* T
a
= 25°C 430 mW
T
stg
Tj
Storage and Junction Temperature Range - 65 to 200
- 65 to 200
°C
T
L Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230 °C
ABSOLUTE RATINGS (limiting values)
Symbol Test Conditions Value Unit
Rth(j-a) Junction-ambient* 400 °C/W
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
** Pulse test: tp ≤ 300µs δ < 2%.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
Symbol Test Conditions Min. Typ. Max. Unit
V
BR Tamb = 25°CIR = 10µA 70 V
V
F
* * T
amb
= 25°CI
F
= 1mA 0.41 V
T
amb
= 25°CI
F
= 15mA 1
I
R
* * T
amb
= 25°CV
R
= 50V 0.2 µA
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C T
amb
= 25°CV
R
= 0V f = 1MHz 2pF
τ T
amb
= 25°CI
F
= 5mA Krakauer Method 100 ps
DYNAMIC CHARACTERISTICS
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