SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Low cost
* Low leakage
* Low forward voltage drop
* High current capability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 1.18 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N5400
THRU
1N5408
DO-201AD
MAXIMUM RATINGS (At TA = 25
o
C unless otherwise noted)
NOTES : Measured at 1 MHZ and applied reverse voltage of 4.0 volts
ELECTRICAL CHARACTERISTICS (At TA = 25
o
C unless otherwise noted)
Dimensions in inches and (millimeters)
2001-5
at Rated DC Blocking Voltage
CHARACTERISTICS
Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at TL = 75
o
C
VF
SYMBOL
IR
UNITS
1.1
5.0
30 uAmps
uAmps
Maximum DC Reverse Current
Maximum Instantaneous Forward Voltage at 3.0A DC Volts
@TA = 25
o
C
@TA = 100
o
C
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408
50
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375” (9.5mm) lead length at TL = 105
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note)
Operating and Storage Temperature Range
SYMBOL
VRRM
VDC
IO
IFSM
CJ
TJ, TSTG
VRMS Volts
Volts
Volts
Amps3.0
200
40
-65 to + 175
Amps
pF
0
C
UNITS
Typical Thermal Resistance R θ JA 30
0
C/W
50 100 200 400 600 800 1000
7035 140 280 420 700560
50 200 400 600 800 1000100
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408
.220 (5.6)
.197 (5.0)
DIA.
.052 (1.3)
.048 (1.2)
DIA.
1.0 (25.4)
MIN.
.335 (8.5)
.375 (9.5)
1.0 (25.4)
MIN.