1N5226B - 1N5257B Series
1N5226B - 1N5257B Series Half Watt Zeners
Device
V
Z
(V)
Z
Z
(Ω)
I
ZT
(mA)
Z
ZK
(Ω)
I
ZK
(mA)
V
R
(V)
I
R
(µA)
T
C
(%/°C)
1N5226B
1N5227B
1N5228B
1N5229B
3.3
3.6
3.9
4.3
28
24
23
22
20
20
20
20
1,600
1,700
1,900
2,000
0.25
0.25
0.25
0.25
1.0
1.0
1.0
1.0
25
15
10
5.0
- 0.07
- 0.065
- 0.06
+/- 0.055
1N5230B
1N5231B
1N5232B
1N5233B
4.7
5.1
5.6
6.0
19
17
11
7.0
20
20
20
20
1,900
1,600
1,600
1,600
0.25
0.25
0.25
0.25
2.0
2.0
3.0
3.5
5.0
5.0
5.0
5.0
+/- 0.03
+/- 0.3
0.038
0.038
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
6.2
6.8
7.5
8.2
8.7
7.0
5.0
6.0
8.0
8.0
20
20
20
20
20
1,000
750
500
500
600
0.25
0.25
0.25
0.25
0.25
4.0
5.0
6.0
6.5
6.5
5.0
3.0
3.0
3.0
3.0
0.045
0.05
0.058
0.062
0.065
1N5239B
1N5240B
1N5241B
1N5242B
9.1
10
11
12
10
17
22
30
20
20
20
20
600
600
600
600
0.25
0.25
0.25
0.25
7.0
8.0
8.4
9.1
3.0
3.0
2.0
1.0
0.068
0.075
0.076
0.077
V
F
Foward Voltage = 1.1 V Maximum @ I
F
= 200 mA for all 1N5200 series
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Tolerance: B = 5%
Electrical Characteristics TA = 25°C unless otherwise noted
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
*These ratings are limiting values above which the serviceability of the diode may be impaired.
**Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C.
@ @
@
Parameter Value Units
Storage Temperature Range -65 to +200 °C
Maximum Junction Operating Temperature + 200 °C
Lead Temperature (1/16” from case for 10 seconds) + 230 °C
Total Device Dissipation
Derate above 75°C
500
4.0
mW
mW/°C
Surge Power** 10 W
NOTE: National preferred devices in BOLD
DO-35
1997 Fairchild Semiconductor Corporation
1N5200B Rev. A