DS18006 Rev. 14 - 2 1 of 2 1N5221B - 1N5267B
1N5221B - 1N5267B
500mW EPITAXIAL ZENER DIODE
Features
Maximum Ratings and Electrical Characteristics
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 1) Pd 500 mW
Thermal Resistance, Junction to Ambient Air (Note 1) Rc113JA 300 c176C/W
Forward Voltage @ I
F
= 200mA V
F 1.1 V
Operating and Storage Temperature Range Tj, TSTG -65 to +200 c176C
c183 Case: DO-35, Glass
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Polarity: Cathode Band
c183 Marking: Type Number
c183 Weight: 0.13 grams (approx.)
c183 500mW Power Dissipation
c183 High Stability
c183 Low Noise
c183 Surface Mount Equivalents Available
c183 Hermetic Package
c183 V
Z
- Tolerance c1775%
Mechanical Data
A AB
C
D
DO-35
Dim Min Max
A 25.40 c190
B c190 4.00
C c190 0.60
D c190 2.00
All Dimensions in mm
Notes: 1. Valid provided that leads are kept at TL c16375c176C with lead length = 9.5mm (3/8”) from case; derate above 75c176C.