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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

1N5194

器件描述:GENERAL PURPOSE SILICON DIODES
器件厂商:CDI-DIODE [Compensated Deuices Incorporated]
文件大小:31.92KB,共2页
Sponsor by e络盟
器件资料摘要:
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (R
OJEC
):
250 ˚C/W maximum
THERMAL IMPEDANCE: (Z
O
JX
): 70
˚C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: ANY.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071 FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com
• AVAILABLE IN JAN, JANTX, AND JANTXV
PERMIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLYBONDED
1N5194
1N5195
1N5196
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating: 1.2 mA/°C From 25°C to 150°C
1.0 mA/°C From 150°C to 175°C
Forward Current: 650 mA
TYPE V
RM
V
RWM
I
O
I
O
I
FSM
T
A
= 150°C T
P
= 1/120 s
T
A
= 25°C
V (pk) V (pk) mA mA A
1N5194 80 70 200 50 2
1N5195 180 180 200 50 2
1N5196 250 225 200 50 2
TYPE V
F
I
R1 at
V
RWM
I
R2 at
V
RM
I
R3 at
V
RWM
@100mA T
A
= 25°C T
A
= 25°C T
A
= 150°C
V dc nAdc µA µAdc
1N5194 0.8 - 1.0 25 100 5
1N5195 0.8 - 1.0 25 100 5
1N5196 0.8 - 1.0 25 100 5