1N4678
器件描述:
文件大小:KB,共页
Sponsor by e络盟
器件资料摘要:
1N4678...1N4717
Vishay Telefunken
Rev. 2, 01-Apr-99 1 (6)
www.vishay.de • FaxBack +1-408-970-5600Document Number 85586
Silicon Epitaxial Planar Z–Diodes
Features
C0068 Zener voltage specified at 50 C0109A
C0068 Maximum delta V
Z
given from 10 C0109A to 100 C0109A
C0068 Very high stability
C0068 Low noise
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
T
j
= 25C0095C
Parameter Test Conditions Type Symbol Value Unit
Power dissipation l=4mm, T
L
=25C0176C P
V
500 mW
Z–current I
Z
P
V
/V
Z
mA
Junction temperature T
j
175 C0176C
Storage temperature range T
stg
–65...+175 C0176C
Maximum Thermal Resistance
T
j
= 25C0095C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, T
L
=constant R
thJA
300 K/W
Electrical Characteristics
T
j
= 25C0095C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage I
F
=100mA V
F
1.5 V