1N457/A
1N457/A, Rev. A
1N457/A
Small Signal Diode
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
DO-35
Color Band Denotes Cathode
2002 Fairchild Semiconductor Corporation
Electrical Characteristics T
A
= 25°C unless otherwise noted

Symbol

Parameter

Value

Units
V
RRM
Maximum Repetitive Reverse Voltage 70 V
I
F(AV)
Average Rectified Forward Current 200 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond

1.0
4.0

A
A
T
stg

Storage Temperature Range -65 to +200 °C
T
J

Operating Junction Temperature 175 °C


Symbol

Parameter

Value

Units
P
D
Power Dissipation 500 mW
R
θJA
Thermal Resistance, Junction to Ambient 300 °C/W

Symbol

Parameter

Test Conditions

Min

Max

Units
V
R
Breakdown Voltage I
R
= 100 µA 70 V
V
F
Forward Voltage 1N457
1N457A
I
F
= 20 mA
I
F
= 100 mA
1.0
1.0
V
V
I
R
Reverse Current V
R
= 60 V
V
R
= 60 V, T
A
= 150°C
25
5
nA
µA
C
T
Total Capacitance 1N457 V
R
= 0, f

= 1.0 MHz 8.0 pF