DS12016 Rev. F-2 1 of 1 1N4454
1N4454
SILICON SWITCHING DIODE
Features
c183 High Reliability
c183 High Conductance
c183 For General Purpose Switching Applications
c183 Available in Surface Mount Version
(LL4454)
c183 Case: DO-35, Plastic
c183 Leads: Solderable per MIL-STD-202,
Method 208
c183 Marking: Type Number
c183 Polarity: Cathode Band
c183 Weight: 0.13 grams (approx.)
Mechanical Data
Maximum Ratings
@ T
A
= 25c176C unless otherwise specified
Note: 1. Valid provided that leads are kept at ambient temperature.
Electrical Characteristics
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol 1N4454 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
75 V
Forward Continuous Current (Note 1) IFM 300 mA
Average Rectified Output Current (Note 1) IO 150 mA
Non-Repetitive Peak Forward Surge Current @ t c163 1.0s
@ t = 1.0c109s
I
FSM
1.0
2.0
A
Power Dissipation (Note 1) Pd 400 mW
Thermal Resistance, Junction to Ambient Air (Note 1) Rc113JA 300 K/W
Operating and Storage Temperature Range Tj,TSTG -65 to +175 c176C
Characteristic Symbol Min Typ Max Unit Test Condition
Maximum Forward Voltage Drop VFM c190c1901.0 V IF = 10mA
Maximum Peak Reverse Current IRM c190c190100 nA VR = 50V
Junction Capacitance Cj c190 4.0 c190 pF VR = 0V, f = 1.0MHz
Reverse Recovery Time trr c190 4.0 c190 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
,R
L
= 100c87
A AB
C
D
DO-35
Dim Min Max
A 25.40 c190
B c190 4.00
C c190 0.60
D c190 2.00
All Dimensions in mm