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1N4448W

器件描述:Small Signal Diodes
器件厂商:GE [General Semiconductor]
厂商主页:http://www.vishay.com/
文件大小:140.92KB,共4页
Sponsor by e络盟
器件资料摘要:
FEATURES
Small Signal Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C

ambient temperature unless otherwise specified
Dimensions in inches and (millimeters)
SOD-123
.022 (0.55)
max
.
.004 (
0
.1)
.112 (
2
.85)
.152
(
3
.8
5)
.067 (1.70)
m
a
x
.
.05
3
(
1
.
35)
min. .010 (0.25)
Cathode Mark
max
.
.006 (
0
.15)
Top View
.140
(
3
.5
5)
.100 (
2
.55)
.055 (1.40)
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
4/98
1N4448W
Symbol Value Unit
Reverse Voltage V
R
75 V
Peak Reverse Voltage V
RM
100 V
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T
amb
= 25 °C and f ≥ 50 Hz
I
0
150
1)
mA
Surge Forward Current at t < 1 s and T
j
= 25 °C I
FSM
500 mA
Power Dissipation at T
amb
= 25 °C P
tot
500
1)
mW
Junction Temperature T
j
175 °C
Storage Temperature Range T
S
–65 to +175 °C
1)
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Silicon Epitaxial Planar Diode
Fast switching diode.
This diode is also available in other case styles including:
the DO-35 case with the type designation 1N4448, the
MiniMELF case with the type designation LL4448, and
the SOT23 case with the type designation IMBD4448.