Note:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Features
1N4448
SILICON EPITAXIAL PLANAR DIODE
Silicon Epitaxial Planar Diode
fast switching diode.
This diode is also available in MiniMELF case with the type
designation LL4448.
Absolute Maximum Ratings (T
a
=25 )
1
Symbols Values Units
Reverse Voltage V
R
75 Volts
Peak reverse voltage V
RM
100 Volts
Rectified current (Average)
Half wave rectification with Resist. Load
at T
amb
=25 and f 50Hz
I
O
150
1)
mA
Surge forward current at t<1s and T
j
=25 I
FSM
500 mA
Power dissipation at T
amb
=25 P
tot
500
1)
mW
Junction Temperature T
j
200
Storage temperature range T
S
-65 to +200
DIMENSIONS
DIM
inches mm
Note
Min. Max. Min. Max.
A - 0.154 - 3.9
B - 0.075 - 1.9
C - 0.020 - 0.52
D 1.083 - 27.50 -