CE 1N4448
CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the Mini-MELF case with the type
designation LL4448
MECHANICAL DATA
. Case: MinMelf glass case(SOD- 80)
. Weight: Approx. 0.05gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol Value Units
Reverse voltage VR 75 Volts
Peak reverse voltage VRM 100 Volts
Average rectified current, Half wave rectification with IAV 1501) mA
Resistive load at TA=25 and F 50Hz
Surge forward current at t<1S and TJ=25 IFSM 500 mW
Power dissipation at TA=25 Ptot 5001) mW
Junction temperature TJ 175
Storage temperature range TSTG -65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbols Min. Typ. Max. Units
Forward voltage at IF=5mA VF 0.62 0.72 V
at IF=10mA VF 1 V
Leakage current at VR=20V IR 25 nA
at VR=75V IR 5 A
at VR=20V, TJ=150 IR 50 A
Junction capacitance at VR=VF=0V CJ 4 pF
Reverse breakdown voltage tested with 100 A puse V(BR)R 100 V
Reverse recovery time from IF=10mA to IR=1mA, 4
VR=6V, RL=100
Thermal resistance junction to ambient R JA 3501) 3501)
Rectification efficience at f=100MHz,VRF=2V 0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
trr ns
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