FEATURES
Small Signal Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C

ambient temperature unless otherwise specified
DO-35
mi
n. 1.083 (
27.5)
mi
n. 1.083
(
2
7
.
5)
max
.
.
150 (
3
.8)
max.
∅
Cathode
.020 (0.52)
Mark
max. ∅.079 (2.0)
Dimensions in inches and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13 g
4/98
1N4448
Symbol Value Unit
Reverse Voltage V
R
75 V
Peak Reverse Voltage V
RM
100 V
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T
amb
= 25 °C and f ≥ 50 Hz
I
0
150
1)
mA
Surge Forward Current at t < 1 s and T
j
= 25 °C I
FSM
500 mA
Power Dissipation at T
amb
= 25 °C P
tot
500
1)
mW
Junction Temperature T
j
175 °C
Storage Temperature Range T
S
–65 to +175 °C
1)
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Silicon Epitaxial Planar Diode
Fast switching diode.
This diode is also available in other
case styles including: the SOD-123
case with the type designation
1N4448W, the MiniMELF case with the
type designation LL4448, and the SOT23
case with the type designation IMBD4448.
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