1N4154
500mW 35 Volt
Silicon Epitaxial Diode
DO-35
Features
• Low Current Leakage
• Compression Bond Construction
• Low Cost
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A --- .166 --- 4.2
B --- .079 --- 2.00
C --- .020 --- .52
D 1.000 --- 25.40 ---
Maximum Ratings
• Operating Temperature: -65°C to +175°C
• Storage Temperature: -65°C to +175°C
• Maximum Thermal Resistance; 300°C/W Junction To Ambient
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage V
R
25V
Peak Reverse
Voltage
V
RM
35V
Average Rectified
Current
I
O
150mA Resistive Load
f > 50Hz
Power Dissipation P
TOT
500mW
Junction
Temperature
T
J 200°C
Peak Forward Surge
Current
I
FSM
500mA 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
V
F
1.0V I
FM
= 30mA;
T
J
= 25°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
100nA V
R
=25Volts
T
J
= 25°C
Typical Junction
Capacitance
C
J
4pF Measured at
1.0MHz, V
R
=4.0V
Reverse Recovery
Time
T
rr
4nS I
F
=10mA
V
R
= 6V
R
L
=100Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
A
B
C
D
D
Cathode
Mark
G01G02G03G04G05G06G07G05G08G08G09G04G03G02G0AG0BG06G07G05G04G0CG0D
G0EG0FG0EG10G0FG06G11G12G0AG13G03G0AG06G14G12G0D
G07G15G0AG12G13G16G05G04G12G15G17G06G07G18G06G19G0FG1AG0FG0F
G1BG15G05G1CG09G1DG06G1EG1FG0FG1FG20G06G21G10G0FG22G23G19G1AG1A
G24G0AG25G1DG06 G06 G06 G1EG1FG0FG1FG20G06G21G10G0FG22G23G19G1AG19
MCC
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