DISCRETE POWER AND SIGNAL
TECHNOLOGIES
Absolute Maximum Ratings* TA = 25 O C unless otherwise noted
Sym Parameter Value Units
T stg Storage Temperature -65 to +200 O C
T J Operating Junction Temperature 175 O C
P D Total Power Dissipation at T A = 25 O C 500 mW
Linear Derating Factor from T A = 25 O C 3.33 mW/ O C
R OJA Thermal Resistance Junction-to-Ambient 300 O C/W
W iv Working Inverse Voltage 35 V
I O Average Rectified Current 100 mA
I F DC Forward Current (I F ) 300 mA
i f Recurrent Peak Forward Current (I F ) 400 mA
i F (surge) Peak Forward Surge Current (I FSM ) Pulse Width = 1.0 second 1.0 Amp
Pulse Width = 1.0 microsecond 4.0 Amp
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
1N4154
Electrical Characteristics TA = 25 O C unless otherwise noted
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
B V Breakdown Voltage 35 V I R = 5.0 uA
I R Reverse Leakage 100 nA V R = 25 V
100 uA V R = 25 V, T A = 150 O C
V F Forward Voltage 1.0 V I F = 30 mA
C T Capacitance 4.0 pF V R = 0.0 V, f = 1.0 MHz
T RR Reverse Recovery Time 4.0 ns I F = 10 mA V R = 6.0 V
I RR = 1.0 mA, R L = 100 ohms
High Conductance
Fast Diode
© 1997 Fairchild Semiconductor Corporation
Features:
• 500 milliwatt Power Dissipation package.
• Fast Switching Speed,
• Typical capacitance less than 1.0 picofarad.
Ordering:
• 13 inch reel, 50 mm (T50R) & 26 mm (T26R) Tape;
10,000 units per reel.
General Description:
The high breakdown voltage, fast switching speed and high
forward conductance of this diode packaged in a DO-35
miniature Glass Axial leaded package makes it desirable also
as a general purpose diode.
CATHODE
BAND
0.200 (5.08)
0.120 (3.05)
0.022 (0.558) Diameter
0.018 (0.458) Typ 20 mils
0.090 (2.28) Diameter
0.060 (1.53)
0.500 Minimum
12.70 Typ 1.000
MARKING
LOGO
1N
41
54
Revision A - September 21, 1998