1N4152
1N4152, Rev. A
1N4152
Small Signal Diode
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
DO-35
Color Band Denotes Cathode
2002 Fairchild Semiconductor Corporation
Electrical Characteristics T
A
= 25°C unless otherwise noted

Symbol

Parameter

Value

Units
V
RRM
Maximum Repetitive Reverse Voltage 40 V
I
F(AV)
Average Rectified Forward Current 200 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond

1.0
4.0

A
A
T
stg

Storage Temperature Range -65 to +200 °C
T
J

Operating Junction Temperature 175 °C

Symbol

Parameter

Value

Units
P
D
Power Dissipation 500 mW
R
θJA
Thermal Resistance, Junction to Ambient 300 °C/W

Symbol

Parameter

Test Conditions

Min

Max

Units
V
R
Breakdown Voltage I
R
= 5.0 µA 40 V
V
F
Forward Voltage I
F
= 0.1 mA
I
F
= 0.25 mA
I
F
= 1.0 mA
I
F
= 2.0 mA
I
F
= 10 mA
I
F
= 20 mA
0.49
0.53
0.59
0.62
0.70
0.74
0.55
0.59
0.67
0.70
0.81
0.88
V
V
V
V
V
V
I
R
Reverse Current V
R
= 30 V
V
R
= 30 V, T
A
= 150°C
50
50
nA
µA
C
T
Total Capacitance V
R
= 0, f

= 1.0 MHz 2 pF
t
rr1
Reverse Recovery Time I
F
= I
R
= 10 mA, R
L
= 100 Ω
I
rr
= 1.0 mA
4 ns
t
rr2
Reverse Recovery Time I
F
= 10 mA, V
R
= 6.0 V,
R
L
= 100 Ω I
rr
= 1.0 mA
2 ns