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1N4151W

器件描述:SMALL SIGNAL DIODES
器件厂商:GE [General Semiconductor]
厂商主页:http://www.vishay.com/
文件大小:202.63KB,共4页
Sponsor by e络盟
器件资料摘要:
1N4151W
SMALL SIGNAL DIODES
FEATURES
¨ Silicon Epitaxial Planar Diode
¨ Fast switching diode.
¨ This diode is also available in other
case styles including the SOD-123 case
with the type designation 1N4151W and the Mini-MELF
case with the type designation LL4151.
MECHANICAL DATA
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified.
SYMBOL VALUE UNIT
Reverse Voltage VR 50 V
Peak Reverse Voltage VRM 75 V
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 ¡C and f ³ 50 Hz IO 150
(1)
mA
Surge Forward Current at t < 1 s and Tj = 25 ¡C IFSM 500 mA
Power Dissipation at Tamb = 25 ¡C Ptot 410
(1)
mW
Junction Temperature Tj 150 ¡C
Storage Temperature Range TS Ð 65 to +150 ¡C
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
1/4/99
Dimensions in inches and (millimeters)
SOD-123
.022 (0.55)
m
a
x
.
.
004 (0.
1)
.
112 (2.
85)
.
152 (3.
85)
.067 (1.70)
m
a
x
.
.
053 (1.
35)
min. .010 (0.25)
Cathode Mark
m
a
x
.
.
006 (0.
15)
Top View
.
140 (3.
55)
.
100 (2.
55)
.055 (1.40)