1N4151
SMALL SIGNAL DIODES
FEATURES
¨ Silicon Epitaxial Planar Diode
¨ Fast switching diode.
¨ This diode is also available in other case
styles including the SOD-123
case with the type designation 1N4151W
and the Mini-MELF case with the type
designation LL4151.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS
Ratings at 25¡C ambient temperature unless otherwise specified.
SYMBOL VALUE UNIT
Reverse Voltage VR 50 Volts
Peak Reverse Voltage VRM 75 Volts
Rectified Current (Average)
Half Wave Rectification with Resist. Load IO 150
(1)
mA
at Tamb = 25 ¡C and f ³ 50 Hz
Surge Forward Current at t < 1s and Tj = 25¡C IFSM 500 mA
Power Dissipation at Tamb = 25¡C Ptot 500
(1)
mW
Junction Temperature Tj 175 ¡C
Storage Temperature Range TS Ð 65 to +175 ¡C
NOTES:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Dimensions in inches and (millimeters)
DO-35
m
in.
1.
083 (27.
5)
m
in.
1.
083 (27.
5)
m
a
x
.
.
150 (3.
8)
max. Ɵ
Cathode
.020 (0.52)
Mark
max. Ɵ.079 (2.0)
1/4/99
Dimensions in inches and (millimeters)