1N4151
500mW 75 Volt Silicon
Epitaxial Diode
DO-35
Features
• Low Current Leakage
• Compression Bond Construction
• Low Cost
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A --- .166 --- 4.2
B --- .079 --- 2.00
C --- .020 --- .52
D 1.000 --- 25.40 ---
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 35°C/W Junction To Ambient
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage V
RM
75V
DC Blocking Voltage V
R
50V
Average Rectified
Current
I
O
150mA Resistive Load
f > 50Hz
Power Dissipation P
TOT
500mW
Junction
Temperature
T
J 150°C
Peak Forward Surge
Current
I
FSM
500mA 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
V
F
1.0V I
FM
= 50mA;
T
J
= 25°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
50nA V
R
=50Volts
T
J
= 25°C
Typical Junction
Capacitance
C
J
2pF Measured at
1.0MHz, V
R
=4.0V
Reverse Recovery
Time
T
rr
4nS I
F
=10mA
V
R
= 6V
R
L
=100Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
A
B
C
D
D
Cathode
Mark
www.mccsemi.com
G01G02G03G04G05G06G07G05G08G08G09G04G03G02G0AG0BG06G07omponents
21201 Itasca Street Chatsworth
G07G18G06G19G0FG1AG0FG0F
G1BG15G05G1CG09G1DG06G1EG1FG0FG1FG20G06G21G10G0FG22G23G19G1AG1A
G24G0AG25G1DG06G06G06G1EG1FG0FG1FG20G06G21G10G0FG22G23G19G1AG19
MCC