CE 1N4151
CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the Mini-MELF case with the type
designation LL4151
MECHANICAL DATA
. Case: DO-35 glass case
. Polarity: Color brand denotes cathode end
. Weight: Approx. 0.13gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol Value Units
Reverse voltage VR 50 Volts
Peak reverse voltage VRM 75 Volts
Average rectified current, Half wave rectification with IAV 1501) mA
Resistive load at TA=25 and F 50Hz
Surge forward current at t<1S and TJ=25 IFSM 500 Ma
Power dissipation at TA=25 Ptot 5001) Mw
Junction temperature TJ 175
Storage temperature range TSTG -65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbols Min. Typ. Max. Units
Forward voltage VF 1 Volts
Leakage current at VR=50V IR 50 nA

at VR=20V, TJ=150 IR 50 A
Junction capacitance at VR=VF=0V CJ 75 2 pF
Reverse breakdown voltage tested with 5 A pulse V(BR)R
Reverse recovery time from IF=10mA to IR=10mA to IR=1mA, trr 4 ns
from IF=10mA to IR=1mA to IR=1mA, VR=6V.RL=100 trr 4.000 ns
Thermal resistance junction to ambient R JA 3501) K/W
Rectification efficience at f=100MHz,VRF=2V 0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
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