1N4150W
SMALL SIGNAL DIODES
FEATURES
¨ Silicon Epitaxial Planar Diode
¨ For general purpose and switching.
¨ This diode is also available in other
case styles including the DO-35 case with the type
designation 1N4150 and the MiniMELF case with the
type designation LL4150.
MECHANICAL DATA
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified.
SYMBOL VALUE UNIT
Peak Reverse Voltage VRM 50 V
Maximum Average Rectified Current IO 200 mA
Maximum Power Dissipation at Tamb = 25¡C Ptot 410
(1)
mW
Maximum Forward Voltage Drop at IF = 200 mA VF 1.0 V
Maximum Reverse Current at VR = 50 V IR 100 nA
Maximum Reverse Recovery Time at IF = IR = 10 to 200 mA, to 0.1 IF Trr 4.0 ns
Maximum Junction Temperature Tj 150 ¡C
Storage Temperature Range TS Ð65 to +150 ¡C
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
1/4/99
Dimensions in inches and (millimeters)
SOD-123
.022 (0.55)
m
a
x
.
.
004 (0.
1)
.
112 (2.
85)
.
152 (3.
85)
.067 (1.70)
m
a
x
.
.
053 (1.
35)
min. .010 (0.25)
Cathode Mark
m
a
x
.
.
006 (0.
15)
Top View
.
140 (3.
55)
.
100 (2.
55)
.055 (1.40)