1N4150W
器件描述：SURFACE MOUNT FAST SWITCHING DIODE
器件厂商：WTE [Won-Top Electronics]
文件大小：30.18KB，共2页
Sponsor by e络盟器件资料摘要：
1N4150W / 1N4151W 1 of 2 © 2002 Won-Top Electronics
1N4150W / 1N4151W
SURFACE MOUNT FAST SWITCHING DIODE
Features
! High Conductance
! Fast Switching Speed A
! Surface Mount Package Ideally Suited for
Automatic Insertion
! For General Purpose Switching Application C
! Plastic Material – UL Recognition Flammability D
Classification 94V-O B
G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01
E
Mechanical Data H
! Case: SOD-123, Molded Plastic G
! Terminals: Plated Leads Solderable per J
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.01 grams (approx.)
! Marking: 1N4150W A4
1N4151W A5
Maximum Ratings @T
A
=25°C unless otherwise specified
Characteristic Symbol 1N4150W 1N4151W Unit
Non-Repetitive Peak Reverse Voltage VRM 50 75 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 V
RMS Reverse Voltage VR(RMS) 35 V
Forward Continuous Current (Note 1) IFM 400 300 mA
Average Rectified Output Current (Note 1) IO 200 150 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
@ t = 1.0s
IFSM
4.0
1.0
2.0
0.5
A
Power Dissipation (Note 1) Pd 410 500 mW
Typical Thermal Resistance, Junction to Ambient Air (Note 1) RG01JA 300 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Electrical Characteristics @T
A
=25°C unless otherwise specified
Characteristic Symbol 1N4150W 1N4151W Unit
Forward Voltage Drop (Note 4) VFM 1.0 V
Peak Reverse Leakage Current @ VR = 50V IRM 100 50 nA
Typical Junction Capacitance (VR = 0V DC, f = 1.0MHz) Cj 2.5 2.0 pF
Reverse Recovery Time (Note 2, 3) trr 4.0 2.0 nS
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. 1N4150W: Measured with IF = IR = 200mA, IRR = 0.1 x IR, RL = 100G01.
3. 1N4151W: Measured with IF = IR = 10mA, IRR = 1.0 x IR, RL = 100G01.
4. 1N4150W: Measured with IF = 200mA. 1N4151W: Measured with IF = 10mA
WTE
POWER SEMICONDUCTORS
SOD-123
Dim Min Max
A 3.6 3.9
B 2.5 2.8
C 1.4 1.8
D 0.5 0.7
E —0.2
G 0.4 —
H 0.95 1.35
J —0.12
All Dimensions in mm
1N4150W / 1N4151W
SURFACE MOUNT FAST SWITCHING DIODE
Features
! High Conductance
! Fast Switching Speed A
! Surface Mount Package Ideally Suited for
Automatic Insertion
! For General Purpose Switching Application C
! Plastic Material – UL Recognition Flammability D
Classification 94V-O B
G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01G01
E
Mechanical Data H
! Case: SOD-123, Molded Plastic G
! Terminals: Plated Leads Solderable per J
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.01 grams (approx.)
! Marking: 1N4150W A4
1N4151W A5
Maximum Ratings @T
A
=25°C unless otherwise specified
Characteristic Symbol 1N4150W 1N4151W Unit
Non-Repetitive Peak Reverse Voltage VRM 50 75 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 V
RMS Reverse Voltage VR(RMS) 35 V
Forward Continuous Current (Note 1) IFM 400 300 mA
Average Rectified Output Current (Note 1) IO 200 150 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
@ t = 1.0s
IFSM
4.0
1.0
2.0
0.5
A
Power Dissipation (Note 1) Pd 410 500 mW
Typical Thermal Resistance, Junction to Ambient Air (Note 1) RG01JA 300 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Electrical Characteristics @T
A
=25°C unless otherwise specified
Characteristic Symbol 1N4150W 1N4151W Unit
Forward Voltage Drop (Note 4) VFM 1.0 V
Peak Reverse Leakage Current @ VR = 50V IRM 100 50 nA
Typical Junction Capacitance (VR = 0V DC, f = 1.0MHz) Cj 2.5 2.0 pF
Reverse Recovery Time (Note 2, 3) trr 4.0 2.0 nS
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. 1N4150W: Measured with IF = IR = 200mA, IRR = 0.1 x IR, RL = 100G01.
3. 1N4151W: Measured with IF = IR = 10mA, IRR = 1.0 x IR, RL = 100G01.
4. 1N4150W: Measured with IF = 200mA. 1N4151W: Measured with IF = 10mA
WTE
POWER SEMICONDUCTORS
SOD-123
Dim Min Max
A 3.6 3.9
B 2.5 2.8
C 1.4 1.8
D 0.5 0.7
E —0.2
G 0.4 —
H 0.95 1.35
J —0.12
All Dimensions in mm