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1N41501N457A

器件描述:Silicon Switching Diode DO-35 Glass Package
器件厂商:MICROSEMI [Microsemi Corporation]
文件大小:71.92KB,共1页
Sponsor by e络盟
器件资料摘要:
Applications
Used in general purpose applications,where a controlled forward
characteristic is important.
Features
Six sigma quality
BKC's Sigma Bond™ plating
for problem free solderability
LL-35 MELF SMD available
Hermetic Glass Package
Extremely low FIT Level
Silicon Switching Diode DO-35 Glass Package
1N41501N457A
DO-35 Glass Package
Dia.
0.06-0.09"


1.0"
25.4 mm
(M in.)
Length
0.120-.200"
3.05-5.08- mm
1.53-2.28 mm
0.018-0.022"
0.458-0.558 mm
Lead Dia.
Maximum Ratings Symbol Value Unit
Peak Inverse Voltage PIV 70 (Min). Volts
Average Rectified Current Iavg 200 mAmps
Continuous Forward Current I
Fdc
300 mAmps
Peak Surge Current (t
peak
= 1 sec.) I
peak
1.0 Amp
Max. Power Dissipation T
L
=50
o
C, L = 3/8" from body P
tot
500 mWatts
Operating Temperature Range T
Op
-80 to +200
o
C
Storage Temperature Range T
St
-80 to +200
o
C
Electrical Characteristics @ 25
o
C* Symbol Minimum Maximum Unit
Forward Voltage Drop @ I
F
= 100 mA V
F
*** 1.00 Volts
Reverse Leakage @ V
R
= 60 V I
R
*** 25 nA
Reverse Leakage @ V
R
= 60 V,100
o
CI
R
*** 0.005 mA
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135