FEATURES
Small Signal Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C

ambient temperature unless otherwise specified
DO-35
mi
n. 1.083 (
27.5)
mi
n. 1.083
(
2
7
.
5)
max
.
.
150 (
3
.8)
max.
∅
Cathode
.020 (0.52)
Mark
max. ∅.079 (2.0)
Dimensions in inches and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13 g
4/98
1N4150
Silicon Epitaxial Planar Diode
For general purpose and switch-
ing.
This diode is also available in other
case styles including: the SOD-123 case
with the type designation 1N4150W and the
MiniMELF case with the type designation
LL4150.
♦
♦
♦
Symbol Value Unit
Peak Reverse Voltage V
RM
50 V
Maximum Average Rectified Current I
0
200 mA
Maximum Power Dissipation at T
amb
= 25 °C P
tot
500 mW
Maximum Junction Temperature T
j
200 °C
Maximum Forward Voltage Drop at I
F
= 200 mA V
F
1.0 V
Maximum Reverse Current at V
R
= 50 V I
R
100 nA
Max. Reverse Recovery Time at I
F
= I
R
= 10 to 200 mA, to 0.1 I
F
t
rr
4.0 ns