RECTRON USA
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com
SEMICONDUCTOR
TECHNICAL SPECIFICATION







1N4150


RECTRON

1N4150 SIGNAL DIODE

Absolute Maximum Ratings (Ta=25°C)
Items Symbol Ratings Unit
Reverse Voltage VR 50 V
Reverse Recovery
Time
trr 4 ns
Power Dissipation
3.33mW/°C (25°C)
P

500 mW
Forward Current IF 200 mA
Junction Temp. Tj -65 to 200 °C
Storage Temp. Tstg -65 to 200 °C

Mechanical Data
Items Materials
Package DO-35
Case Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
Chip Glass Passivated

Dimensions (DO-35)
DO-35
0.457
0.559
2.0
max.
4.2
max.
26 MIN
26 MIN
Dimensions in millimeters
DIA.
DIA.


Electrical Characteristics (Ta=25°C)
Ratings Symbol Ratings Unit
Breakdown Voltage
IR= 5.0uA
BV
50
V
Peak Forward Surge Current PW= 1sec. IFsurge 1.0 A
Maximum Forward Voltage
IF= 200mA
VF
1.0
V
Maximum Reverse Current
VR= 50V
VR= 20V, Tj= 150°C
IR
0.10
100
uA
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Cj
2.5
pF
Max Reverse Recovery Time
IF= -IR= 10-200mA, to 0.1 IF
trr
4
ns