1N4149CSM
器件描述:SILICON EPITAXIAL PLANAR DIODE
文件大小:11.59KB,共1页
Sponsor by e络盟
器件资料摘要:
Parameter Test Conditions Min. Typ. Max. Unit
Parameter Test Conditions Min. Typ. Max. Unit
Reverse Voltage
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current
Power Dissipation at T
amb
= 25 °C
1N4149CSM
MECHANICAL DATA
Dimensions in mm (inches)
21
0.51 ± 0.10
(0.02 ± 0.004) 0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.
54 ±
0.
13
(
0
.
10 ±
0.
005)
0.
76
± 0.
1
5
(
0
.
03 ±
0.
00
6)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
SILICON EPITAXIAL
PLANAR DIODE
10/99
LAB
SEME
Forward Voltage
Reverse Current
Reverse Avalanche Breakdown
Voltage
Capacitance
Forward Recovery Voltage
Reverse Recovery Time
I
F
= 10mA
V
R
= 20V
V
R
= 20V , T
j
= 150°C
I
R
= 100m A
I
R
= 5m A
V
R
= 0V , f = 1 MHz
I
F
= 50mA , t
r
= 20ns
I
F
= 10mA to I
R
= 60mA
R
L
= 100W
1
25
50
100
100
4
2.5
4
V
nA
m A
V
V
pF
V
ns
CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
General Purpose and
Switching Diode in
Hermetic Ceramic Surface Mount
Package for
High Reliability Applications
V
R
V
RRM
I
F(AV)
I
F
I
FRM
I
FSM
P
tot
V
V
mA
mA
mA
mA
mW
t = 1m s
t = 1s
100
100
150
200
450
2000
500
500
V
F
I
R
V
(BR)R
C
d
V
fr
t
rr
Underside View
PAD 1 — Anode PAD 2 — Not Connected PAD 3 — Cathode
SOT23 CERAMIC
(LCC1 PACKAGE)
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
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