High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
1N4150 / FDLL4150
Symbol Parameter Value Units
W
IV
Working Inverse Voltage 50 V
I
O
Average Rectified Current 200 mA
I
F
DC Forward Current 400 mA
i
f
Recurrent Peak Forward Current 600 mA
i
f(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
4.0
A
A
T
stg
Storage Temperature Range -65 to +200 °C
T
J
Operating Junction Temperature 175 °C
Symbol Characteristic Max Units
1N / FDLL 4150
P
D
Total Device Dissipation
Derate above 25°C
500
3.33
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 300 °C/W
COLOR BAND MARKING
DEVICE 1ST BAND 2ND BAND
FDLL4150 BLACK ORANGE
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
DO-35
1N4150 / FDLL4150
Discrete POWER & Signal
Technologies
ã1997 Fairchild Semiconductor Corporation