1N4150
Vishay Telefunken
Rev. 2, 01-Apr-99 1 (3)
www.vishay.de • FaxBack +1-408-970-5600Document Number 85522
Silicon Epitaxial Planar Diode
Features
C0068 Low forward voltage drop
C0068 High forward current capability
Applications
High speed switch and general purpose use in com-
puter and industrial applications
94 9367
Absolute Maximum Ratings
T
j
= 25C0095C
Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
RRM
50 V
Reverse voltage V
R
50 V
Peak forward surge current t
p
=1C0109s I
FSM
4 A
Forward current I
F
600 mA
Average forward current V
R
=0 I
FAV
300 mA
Power dissipation l=4mm, T
L
=45C0176C P
V
440 mW
l=4mm, T
L
C012025C0176C P
V
500 mW
Junction temperature T
j
175 C0176C
Storage temperature range T
stg
–65...+175 C0176C
Maximum Thermal Resistance
T
j
= 25C0095C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, T
L
=constant R
thJA
350 K/W