Notes:
(1) These diodes are also avaiable in glass case DO-34
(2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Parameters for diodes in case DO-34: P
tot
=300mW T
S
=-65 to +175
T
J
=175 R
tha
0.4K/mW
Features
1N914 THRU 1N4454
SILICON EPITAXIAL PLANAR DIODES
Silicon Epitaxial Planar Diodes
for general purpose and switching
The types 1N4149, 1N4447 and 1N4449 are also available
in glass case DO-34.
Electrical Characteristics
1
Type Peak
reverse
voltage
Max.
aver.
rectified
current
Max.
power
dissip.
at 25
Max.
junction
temper-
ature
Max. forward
voltage drop
Max. reverse
current
Max. reverse recovery time
V
RM
VI
O
mA P
tot
mW T
j
V
F
V
at
I
F
mA
I
n
nA
at
V
R
V
t
rr
nS Conditions
1N914 100 75 500 200 1.0 10 25 20 Max. 4.0 I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4149
1)
100 150 500 200 1.0 10 25 20 Max. 4.0 I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4150 50 200 500 200 1.0 200 100 50 Max. 4.0 I
F
=I
R
=10 to 200 mA, to 0.1 I
F
1N4152 40 150 400 175 0.55 0.10 50 30 Max. 2.0 I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4153 75 150 400 175 0.55 0.10 50 50 Max. 2.0 I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4154 35 150
2)
500 200 1.0 0.10 100 25 Max. 2.0 I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4447
1)
100 150 500 200 1.0 20 25 20 Max. 4.0 I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4449
1)
100 150 500 200 1.0 30 25 20 Max. 4.0 I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4450 40 150 400 175 0.54 0.50 50 30 Max. 4.0 I
F
=I
R
=10mA, to I
R
=1mA
1N4451 40 150 400 175 0.50 0.10 50 30 Max. 10 I
F
=I
R
=10mA, to I
R
=1mA
1N4453 30 150 400 175 0.55 0.01 50 20 - -
1N4454 75 150 400 175 1.0 10 100 50 Max. 4.0 I
F
=I
R
=10mA, to I
R
=1mA
DIMENSIONS
DIM
inches mm
Note
Min. Max. Min. Max.
A - 0.154 - 3.9
B - 0.075 - 1.9
C - 0.020 - 0.52
D 1.083 - 27.50 -DIMENSIONS
DIM
inches mm
Note
Min. Max. Min. Max.
A - 0.114 - 2.9
B - 0.075 - 1.9
C - 0.017 - 0.42
D 0.630 - 16.0 -