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Prelim. 7/00
Parameter Test Conditions Min. Typ. Max. Unit
Reverse Voltage
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current
Power Dissipation at T
amb
= 25 °C
1N4148CSM
MECHANICAL DATA
Dimensions in mm (inches)
21
0.51 ± 0.10
(0.02 ± 0.004) 0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.
54 ±
0.
13
(
0
.
10 ±
0.
005)
0.
76
± 0.
1
5
(
0
.
03 ±
0.
00
6)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
SILICON EPITAXIAL
PLANAR DIODE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
Fast Switching Diode in
Hermetic Ceramic Surface Mount Package
For High Reliability Applications
V
R
V
RRM
I
F(AV)
I
F
I
FRM
I
FSM
P
tot
V
V
mA
mA
mA
mA
mW
t = 1G6Ds
t = 1s
75
75
150
200
450
2000
500
500
Underside View
PAD 1 — Anode PAD 2 — Not Connected PAD 3 — Cathode
SOT23 CERAMIC
(LCC1 PACKAGE)
T
stg
Storage Temperature Range -55 to +175 °C
T
j
Max junction temperature +150°C