1N4148 / 1N4448
Features
- Fast Switching Speed
- General Purpose Rectification
- Silicon Epitaxial Planar Construction
Mechanical Data
- Case: DO-35
- Terminals: Solderable per MIL-STD-202,
Method 208
- Polarity: Cathode Band
- Weight: 0.13 grams (approx.)
Fast Switching Diode
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COMCHIP
MDS0312005A Page 1
High Speed DO-35
Dimensions in inches and (millimeters)
1.0 (25.4)
Min.
1.0 (25.4)
Min.
0.079 (2.0)
Max.
0.157 (4.0)
Max.
0.024 (0.60)
Max.
Characteristic Symbol 1N4148 1N4448 Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
75 V
RMS Reverse Voltage VR(RMS) 53 V
Forward Continuous Current (Note 1) IFM 300 500 mA
Average Rectified Output Current (Note 1) IO 150 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0c109s
I
FSM
1.0
2.0
A
Power Dissipation (Note 1)
Derate Above 25c176C
P
d
500
1.68
mW
mW/c176C
Thermal Resistance, Junction to Ambient Air (Note 1) Rc113JA 300 K/W
Operating and Storage Temperature Range Tj ,TSTG -65 to +175 c176C
Maximum Ratings
@ T
A
= 25c176C unless otherwise specified
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
Characteristic Symbol Min Max Unit Test Condition
Maximum Forward Voltage 1N4148
1N4448
1N4448
V
FM
c190
0.62
c190
1.0
0.72
1.0
V
I
F
= 10mA
I
F
= 5.0mA
I
F
= 100mA
Maximum Peak Reverse Current IRM c190
5.0
50
30
25
c109A
c109A
c109A
nA
V
R
= 75V
V
R
= 70V, T
j
= 150c176C
V
R
= 20V, T
j
= 150c176C
V
R
= 20V
Capacitance Cj c190 4.0 pF VR = 0, f = 1.0MHz
Reverse Recovery Time trr c190 4.0 ns
I
F
= 10mA to I
R
=1.0mA
V
R
= 6.0V, R
L
= 100c87
Electrical Characteristics
@ T
A
= 25c176C unless otherwise specified