1N4148
500mW 100 Volt
Silicon Epitaxial Diode
DO-35
Features
• Low Current Leakage
• Metalurgically Bonded Construction
• Low Cost
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A --- .166 --- 4.2
B --- .079 --- 2.00
C --- .020 --- .52
D 1.000 --- 25.40 ---
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 35°C/W Junction To Ambient
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage V
R
75V
Peak Reverse
Voltage
V
RM
100V
Average Rectified
Current
I
O
150mA Resistive Load
f > 50Hz
Power Dissipation P
TOT
500mW
Junction
Temperature
T
J 200°C
Peak Forward Surge
Current
I
FSM
500mA t<1s
Maximum
Instantaneous
Forward Voltage
V
F
1.0V I
FM
= 10mA;
T
J
= 25°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
25nA
50µA
V
R
=20Volts
T
J
= 25°C
T
J
= 150°C
Typical Junction
Capacitance
C
J
4pF Measured at
1.0MHz, V
R
=4.0V
Reverse Recovery
Time
T
rr
4nS I
F
=10mA
V
R
= 6V
R
L
=100Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
A
B
C
D
D
Cathode
Mark
www.mccsemi.com
5uA VR=75Volts
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