1N4148
器件描述:SMALL SIGNAL SWITCHING DIODE
文件大小:188.58KB,共3页
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器件资料摘要:
CE 1N4148
CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the Mini-Melf case with the type
designation LL4148
MECHANICAL DATA
. Case: DO-35 glass case
. Polarity: Color brand denotes cathode end
. Weight: Approx. 0.13gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol Value Units
Reverse voltage VR 75 Volts
Peak reverse voltage VRM 100 Volts
Average rectified current, Half wave rectification with IAV 150 mA
Resistive load at TA=25 and F 50Hz
Surge forward current at t<1S and TJ=25 IFSM 500 mA
Power dissipation at TA=25 Ptot 5001) mW
Junction temperature TJ 175
Storage temperature range TSTG -65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbols Min. Typ. Max. Units
Forward voltage VF 1 Volts
Leakage current at VR=20V IR 25 nA
at VR=75V IR 5 nA
at VR=20V, TJ=150 IR 50 nA
Junction capacitance at VR=VF=0V CJ 4 pF
Voltage rise when switching ON tested with 50mA 2.5 Volts
pulse Tp=0.1 S, Rise time<30 S, fp=5 to 100KHz
Reverse recovery time from IF=10mA to IR=1mA, trr 4 ns
VR=6V, RL=100
Thermal resistance junction to ambient R JA 350 K/W
Rectification efficience at f=100MHz,VRF=2V 0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Vfr
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