1N4148
SMALL-SIGNAL DIODE
Reverse Voltage 100 Volts Peak Forward Current - 150mA
SYMBOLS
SYMBOL
Zowie Technology CorporationREV. : 0
DO-35
*Dimensions in inches and (millimeters)
MAXIMUM RATINGS THERMAL CHARACTERISTICS ( T
A
=25
o
C unless otherwise noted )
Continuous Reverse Voltage
Peak Reverse Voltage
Average Rectified Current
Half Wave Rectification with Resistive Load at Tamb = 25
o
C
Thermal Resistance Junction to Ambient Air
(1)
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS ( T
A
=25
o
C unless otherwise noted )
Reverse Voltage Leakage Current
Reverse Breakdown Voltage
Forward Voltage
Junction Capacitance
Voltage Rise when Switching ON
( tested with 50 mA Pulses )
Reverse Recovery Time
( V
R
=20Vdc )
( V
R
=75Vdc )
( V
R
=20Vdc, T
J
=150
o
C )
( I
R
=100uAdc )
( I
F
=10mAdc )
( V
R
=0, f=1.0MHz )
( t
p
=0.1us, Rise time < 30ns
f
p
=5 to 100 kH
Z
( I
F
=10mA, IR=1mA, VR=6V, RL=100 )
V
R
V
RM
IF
( AV )
R
JA
T
STG
T
J
I
R
V
( BR )
V
F
C
J
V
FR
t
rr
VALUE
75
100
150
UNITS
UNITS
Vdc
Vdc
Surge Forward Current at t < 1s and Tj = 25
o
C
I
FSM 500 mAdc
mAdc
Power Dissipation at Tamb = 25
o
C
(1)
P
tot
500 mW
350
175
-65 to +175
o
C / W
o
C
o
C
MIN. TYP.
-
-
-
-
-
-
Vdc100 -
- - Vdc
- -
-
MAX.
25
5
50
nAdc
uAdc
uAdc
-
1.0
4
- - 2.5
4-
pF
V
nS
PARAMETER
PARAMETER
TEST CONDITION
.022 (0.56)
.165 (4.2)
MAX.
1.02 (26.0)
MIN.
1.02 (26.0)
MIN.
.018 (0.46)
.079 (2.0)
MAX.
DIA.
FEATURES
MECHANICAL DATA
* Silicon Epitaxial Planar Diode
* Fast switching diode.
Case : DO-35 Glass Case
Weight : approx. 0.13 gram