1N4148.1N4448
Vishay Telefunken
Rev. 2, 01-Apr-99 1 (4)
www.vishay.de • FaxBack +1-408-970-5600Document Number 85521
Silicon Epitaxial Planar Diodes
Features
C0068 Electrically equivalent diodes: 1N4148 – 1N914
1N4448 – 1N914B
Applications
Extreme fast switches
94 9367
Absolute Maximum Ratings
T
j
= 25C0095C
Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
RRM
100 V
Reverse voltage V
R
75 V
Peak forward surge current t
p
=1C0109s I
FSM
2 A
Repetitive peak forward current I
FRM
500 mA
Forward current I
F
300 mA
Average forward current V
R
=0 I
FAV
150 mA
Power dissipation l=4mm, T
L
=45C0176C P
V
440 mW
l=4mm, T
L
C012025C0176C P
V
500 mW
Junction temperature T
j
200 C0176C
Storage temperature range T
stg
–65...+200 C0176C
Maximum Thermal Resistance
T
j
= 25C0095C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, T
L
=constant R
thJA
350 K/W