1N4001G
器件描述:1.0A GLASS PASSIVATED RECTIFIER
文件大小:53.91KB,共3页
Sponsor by e络盟
器件资料摘要:
1N4001G – 1N4007G 1 of 3 © 2002 Won-Top Electronics
1N4001G – 1N4007G
1.0A GLASS PASSIVATED RECTIFIER
Features
! Glass Passivated Die Construction
! Low Forward Voltage Drop
! High Current Capability A B A
! High Reliability
! High Surge Current Capability
Mechanical Data C
! Case: Molded Plastic D
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.35 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
Maximum Ratings and Electrical Characteristics @T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
1N
4001G
1N
4002G
1N
4003G
1N
4004G
1N
4005G
1N
4006G
1N
4007G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current
(Note 1) @T
A
= 75°C
IO 1.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM 30 A
Forward Voltage @I
F
= 1.0A VFM 1.0 V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
IRM
5.0
50
µA
Typical Junction Capacitance (Note 2) Cj 8.0 pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
RG01JA 100 K/W
Operating Temperature Range Tj -65 to +175 °C
Storage Temperature Range TSTG -65 to +175 °C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
DO-41
Dim Min Max
A 25.4 —
B 4.06 5.21
C 0.71 0.864
D 2.00 2.72
All Dimensions in mm