A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 2 mA 15 V
BV
CBO
I
C
= 1.0 µA30V
I
CBO
V
CB
= 6.0 V
T
A
= 150
O
C
10
1.0
µA
BV
EBO
I
E
= 10 µ .V
h
FE
V
CE
= 6.0 V I
C
= 5.0 mA 20 150 ---
C
ob
V
CB
= 6 V f = 1.0 MHz 0.75 pF
h
FE
V
CE
= 6 V I
C
= 5 mA 20 150 ---
h
fe
 V
CE
= 6 V I
C
= 5 mA f = 400 MHz 3.75 4.25 6 ---
r
b
´C
C
V
CB
= 6 V I
E
= -5 mA f = 79.8 MHz 1 5 8 pF
P
OSC
V
CC
= 20 V I
C
= 15 mA f = 1.0 GHz 60 mW
N
F
V
CB
= 6 V I
C
= 2 mA R
G
= 50 Ω f = 1.0 GHz 6 7 dB
NPN SILICON HIGH FREQUENCY TRANSISTOR
2N3570
DESCRIPTION:
The 2N3570 is Designed for High
Frequency Low Noise Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
I
C
50 mA
V
CB
30 V
V
CE
15 V
V
EB
3.0 V
P
DISS
200 mW @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
θ
JC
500
O
C/W
PACKAGE STYLE TO- 72
1 = EMITTER 2 = BASE
3 = COLLECTOR 4 = CASE