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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

1N4001

器件描述:1.0A RECTIFIER
器件厂商:DIODES [Diodes Incorporated]
厂商主页:http://www.diodes.com/
文件大小:59.19KB,共2页
Sponsor by e络盟
器件资料摘要:
DS28002 Rev. E-2 1 of 2 1N4001/L-1N4007/L
Features
1N4001/L - 1N4007/L
1.0A RECTIFIER
“L” Suffix Designates A-405 Package
No Suffix Designates DO-41 Package
A AB
C
D
DO-41 Plastic A-405
Dim Min Max Min Max
A 25.40 c190 25.40 c190
B 4.06 5.21 4.10 5.20
C 0.71 0.864 0.53 0.64
D 2.00 2.72 2.00 2.70
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25c176C unless otherwise specified
c183 Diffused Junction
c183 High Current Capability and Low Forward
Voltage Drop
c183 Surge Overload Rating to 30A Peak
c183 Low Reverse Leakage Current
c183 Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
c183 Case: Molded Plastic
c183 Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
c183 Polarity: Cathode Band
c183 Weight: DO-41 0.30 grams (approx)
A-405 0.20 grams (approx)
c183 Mounting Position: Any
c183 Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
1N
4001/L
1N
4002/L
1N
4003/L
1N
4004/L
1N
4005/L
1N
4006/L
1N
4007/L
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current
(Note 1) @ T
A
= 75c176C
I
O 1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM 30 A
Forward Voltage @ I
F
= 1.0A V
FM 1.0 V
Peak Reverse Current @ T
A
= 25c176C
at Rated DC Blocking Voltage @ T
A
= 100c176C
I
RM
5.0
50
c109A
Typical Junction Capacitance (Note 2) Cj 15 8 pF
Typical Thermal Resistance Junction to Ambient Rc113JA 100 K/W
Maximum DC Blocking Voltage Temperature TA +150 c176C
Operating and Storage Temperature Range (Note 3) Tj, TSTG -65 to +175 c176C
Notes: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1. MHz and applied reverse voltage of 4.0V DC.
3. JEDEC Value.