1N4001 – 1N4007 1 of 3 © 2002 Won-Top Electronics
1N4001 – 1N4007
1.0A SILICON RECTIFIER
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability A B A
! High Reliability
! High Surge Current Capability
Mechanical Data C
! Case: Molded Plastic D
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.35 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
Maximum Ratings and Electrical Characteristics @T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
1N
4001
1N
4002
1N
4003
1N
4004
1N
4005
1N
4006
1N
4007
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current
(Note 1) @T
A
= 75°C
IO 1.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM 30 A
Forward Voltage @I
F
= 1.0A VFM 1.0 V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
IRM
5.0
50
µA
Typical Junction Capacitance (Note 2) Cj 15 pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
RG01JA 50 K/W
Operating Temperature Range Tj -65 to +125 °C
Storage Temperature Range TSTG -65 to +150 °C
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
DO-41
Dim Min Max
A 25.4 —
B 4.06 5.21
C 0.71 0.864
D 2.00 2.72
All Dimensions in mm