MILLIMETERS INCHES
DIM MIN MAX MIN MAX
D 1.60 1.70 0.063 0.067
F 0.41 0.55 0.016 0.022
G 3.30 3.70 .130 .146
G1 2.54 REF. .100 REF.
S 0.03 MIN. .001 MIN.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071 FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com
• 1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV
PERMIL-PRF-19500/231
• SWITCHINGDIODE
• HERMETICALLYSEALED
• METALLURGICALLYBONDED
• DOUBLEPLUGCONSTRUCTION
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80; LL34)
LEAD FINISH: Tin / Lead
THERMALRESISTANCE (R
OJEC
):
100 °C/W maximum AT L = 0
THERMALIMPEDANCE: (Z
O
JX
): 70
˚C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
1N4150UR-1
1N3600UR
CDLL4150
CDLL3600
V
F1
V
F2
V
F3
V
F4
V
F5
Limits I
F
= 1 mAdc I
F
= 10 mAdc I
F
= 50 mAdc I
F
= 100 mAdc I
F
= 200 mAdc
(Pulsed) (Pulsed) (Pulsed)
V dc V dc V dc V dc V dc
minimum 0.540 0.680 0.780 0.820 0.870
maximum 0.620 0.740 0.860 0.920 1.000
Type V
BR
V
RWM
I
R1
1
R2
Ct
rr
V
R
= 50 V dc V
R
= 50 V dc V
R
= 0; f = 1 Mhz; I
F
= I
R
= 10 to 100 mAdc
I
R
= 10 µA T
A
= 25°C T
A
= 150°C ac signals = 50 m V (p-p) R
L
= 100 ohms
V dc V(pk) µA dc µAdc pF ns
CDLL3600 75 50 0.1 100 2.5 4
CDLL4150,-1 75 50 0.1 100 2.5 4
MAXIMUM RATINGS
Junction Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA @ T
A
= + 25°C
Derating: 3.1 mA dc/°C Above T
EC
= + 110°C
Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s)
ELECTRICALCHARACTERISTICS @ 25°C, unless otherwise specified.
FORWARDVOLTAGELIMITS– ALLTYPES