EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

1N34A

器件描述:Optimized for Radio Frequency Response
器件厂商:MICROSEMI [Microsemi Corporation]
文件大小:62.67KB,共1页
Sponsor by e络盟
器件资料摘要:
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
Absolute Maximum Ratings at T
amb
= 25
O
C
Parameter Symbols Min. Max. Units
Peak Inverse Voltage (Repetitive), Measured @ I
R
= 1 mA PIV ** 65 Volts
Peak Forward Surge Current Non-Repetitive, t = 1 Second I
FSM
0.5 Amps
Peak Forward Surge Current Repetitive I
FSR
200 mA
Average Rectified Forward Current I
O
50 mA
Operating and Storage Temperatures T
J & STG
-55 +75
O
C
Electrical Characteristics at T
amb
= 25
O
C
Parameter Test Conditions Symbols Min. Max. Units
Forward Voltage Drop I
F
= 5.0mA V
F
1.0 Volts
V
R
= 10 Volts 30 µA
Reverse Leakage V
R
= 50 Volts I
R
500 µA
Breakdown Voltage Ir = 1.0 mA PIV 65 Volts
Features
Lower leakage current
Flat junction capacitance
High mechanical strength
At least 1 million hours MTBF
BKC's Sigma-Bond™ plating for
problem free solderability
Applications
AM/FM detectors
Ratio detectors
FM discriminators
TV audio detectors
RF input probes
TV video detectors
Gold Bonded 1N34A Germanium Diodes
Optimized for Radio Frequency Response
Can be used in many AM, FM and TV-IF applications, replacing point contact devices.
1.0"
25.4 mm
(Min.)
DO-7 Glass Package

Dia
0.085-.107 "
2.16-2.71 mm
0.018-0.022"
0.458-.558 mm
Length
0.230-0.30"
5.85-7.62mm