Fuji Discrete Package IGBT
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Minimized Internal Stray Inductance
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Outline Drawing
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings ( T c =25°C )
Items Symbols Ratings Units
Collector-Emitter Voltage V CES 600 V
Gate -Emitter Voltage V GES ± 20 V
DC T c = 25°C I C 25 20
Collector Current DC T c =100°C I C 100 10 A
1ms T c = 25°C I C PULSE 80
IGBT Max. Power Dissipation P C 75 W
FWD Max. Power Dissipation P C 35 W
Operating Temperature T j +150 °C
Storage Temperature T stg -40 ∼ +125 °C
Mounting Screw Torque 40 Nm
• Electrical Characteristics ( at T j =25°C )
Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current I CES V GE =0V V CE =600V 1.0 mA
Gate-Emitter Leackage Current I GES V CE =0V V GE = ± 20V 20 µ A
Gate-Emitter Threshold Voltage V GE(th) V GE =20V I C =10mA 5.5 8.5
Collector-Emitter Saturation Voltage V CE(sat) V GE =15V I C =10A 3.0
Input capacitance C ies V GE =0V 700
Output capacitance C oes V CE =10V 150 pF
Reverse Transfer capacitance C res f=1MHz 20
t ON V CC =300V 1.2
t r I C =10A 0.6
t OFF V GE = ±15V 1.0
Switching Time t f R G =220 Ω 0.35
t ON V CC =300V 0.16
t r I C =10A 0.11
t OFF V GE =+15V 0.30
t f R G =22 Ω 0.35
Diode Forward On-Voltage V F I F =10A V GE =0V 3.0 V
Reverse Recovery Time t rr I F =10A , VGE=-10V, di/dt=100A/µ s 300 ns
• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
R th(j-c) IGBT 1.66
R th(j-c) Diode 3.57
n Equivalent Circuit
Turn-on Time
Turn-on Time
Turn-off Time
Turn-off Time
Thermal Resistance
V
µ s
µ s
°C/W