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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

1M130Z

器件描述:GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
器件厂商:TRSYS [TRSYS]
厂商主页:
文件大小:348.88KB,共5页
Sponsor by e络盟
器件资料摘要:
1N4741A THRU 1M200Z
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt

FEATURES
l Low profile package
l Built - in strain relief
l Glass passivated junction
l Low inductance
l Typical I R less than 5.0 A above 11V
l Hig h temperature soldering :
260 /10 seconds at terminals
l Plastic package has Underwriters Laboratory
Flammability Classification 94V - O

MECHANICAL DATA
Case: Molded plastic, DO - 41
Epoxy: UL 94V - O rate flame retardant
Lead: Axial leads, solderable per MIL - STD - 202,
method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.012 ounce, 0.3 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
SYMBOL VALUE UNITS
Pea k Pulse Power Dissipation on T A =50 (Note A)
Derate above 50
P D 1.0
6.67
Watts
mW/
Peak forward Surge Current 8.3ms single half sine - wave
superimposed on rated load(JEDEC Method) (Note B)
I FSM 10 Amps
Operating Junction and Storage Temperature Range T J ,T STG - 55 to +150
NOTES:
A. Mounted on 5.0mm 2 (.013mm thick) land areas.
B. Measured on 8.3ms, single half sine - wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.







DO-41