1H1 – 1H8 1 of 3 © 2002 Won-Top Electronics
1H1 – 1H8
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability A B A
! High Reliability
! High Surge Current Capability
Mechanical Data C
! Case: Molded Plastic D
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.181grams (approx.)
! Mounting Position: Any
! Marking: Type Number
Maximum Ratings and Electrical Characteristics @T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol 1H1 1H2 1H3 1H4 1H5 1H6 1H7 1H8 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 100 200 300 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 210 280 420 560 700 V
Average Rectified Output Current
(Note 1) @T
A
= 55°C
IO 1.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM 30 A
Forward Voltage @I
F
= 1.0A VFM 1.0 1.3 1.7 V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
IRM
5.0
100
µA
Reverse Recovery Time (Note 2) trr 50 75 nS
Typical Junction Capacitance (Note 3) Cj 20 15 pF
Operating Temperature Range Tj -65 to +125 °C
Storage Temperature Range TSTG -65 to +150 °C
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 1.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
R-1
Dim Min Max
A 20.0 —
B 2.00 3.50
C 0.53 0.64
D 2.20 2.60
All Dimensions in mm