1.6 GHZ SATCOM APPLICATIONS
RF & MICROWAVE TRANSISTORS
.230 2LFL (M151)
hermetically sealed
.1.65 GHz
.28 VOLTS
.OVERLAY DIE GEOMETRY
.GOLD METALLIZATION
.HIGH RELIABILITY AND RUGGEDNESS
.P
OUT =
10 W MIN. WITH 11.0 dB GAIN
.COMMON BASE
DESCRIPTION
The SD1893-03 is a 28 V silicon NPN planar tran-
sistor designed for INMARSAT and other 1.6 GHz
SATCOM applications. The device utilizes poly-
silicon site ballasting with a gold metallized die
to achieve high reliability and ruggedness.
PIN CONNECTION
BRANDING
1893-3
ORDER CODE
SD1893-03
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
°
C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 45 V
V
CEO
Collector-Emitter Voltage 15 V
V
EBO
Emitter-Base Voltage 3.5 V
IC Device Current 4.4 A
PDISS Power Dissipation 43 W
T
J
Junction Temperature +200
°
C
T
STG
Storage Temperature − 65 to +200
°
C
RTH(j-c) Junction-Case Thermal Resistance 5.5 °C/W
SD1893-03
1. Collector 3. Base
2. Emitter
THERMAL DATA
November 1992
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