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1530-1
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS 器件厂商：STMICROELECTRONICS [STMicroelectronics] 厂商主页：http://www.st.com/ 文件大小：39.39KB 文件页数：3 PDF阅读：1530-1.pdf (点击阅读器件资料) 摘要： AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS .280 4LSL (M115) epoxy sealed .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .40 WATTS (typ.) IFF 1030 - 1090 MHz .35 WATTS (min.) DME 1025 - 1150 MHz .25 WATTS (typ.) TACAN 960 - 1215 MHz .9.0 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS .INFINITE LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS .INPUT MATCHED, COMMON BASE CONFIGURATION DESCRIPTION The SD1530-01 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1530-01 is pack- aged in the .280” input matched stripline package resulting in improved broadband performance and a low thermal resistance. PIN CONNECTION BRANDING 1530-1 ORDER CODE SD1530-01 ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V V CES Collector-Emitter Voltage 65 V V EBO Emitter-Base Voltage 3.5 V IC Device Current 2.6 A PDISS Power Dissipation 87.5 W T J Junction Temperature +200 ° C T STG Storage Temperature ? 65 to +150 ° C RTH(j-c) Junction-Case Thermal Resistance 2.0 °C/W SD1530-01 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA October 11, 1993 rev. 1 1/3 相关器件：SD1530-01

1530-1

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：39.39KB
文件页数：3
PDF阅读：1530-1.pdf (点击阅读器件资料)

摘要：
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 4LSL (M115)
epoxy sealed
.DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
.40 WATTS (typ.) IFF 1030 - 1090 MHz
.35 WATTS (min.) DME 1025 - 1150 MHz
.25 WATTS (typ.) TACAN 960 - 1215 MHz
.9.0 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.INFINITE LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.INPUT MATCHED, COMMON BASE
CONFIGURATION
DESCRIPTION
The SD1530-01 is a gold metallized silicon, NPN
power transistor designed for applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1530-01 is pack-
aged in the .280” input matched stripline package
resulting in improved broadband performance and
a low thermal resistance.
PIN CONNECTION
BRANDING
1530-1
ORDER CODE
SD1530-01
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°
C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
V
CES
Collector-Emitter Voltage 65 V
V
EBO
Emitter-Base Voltage 3.5 V
IC Device Current 2.6 A
PDISS Power Dissipation 87.5 W
T
J
Junction Temperature +200
°
C
T
STG
Storage Temperature ? 65 to +150
°
C
RTH(j-c) Junction-Case Thermal Resistance 2.0 °C/W
SD1530-01
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
October 11, 1993
rev. 1 1/3

相关器件：SD1530-01

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