AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 SQ. 2LFL (M105)
hermetically sealed
.DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
.20 WATTS (typ.) IFF 1030 - 1090 MHz
.15 WATTS (min.) DME 1025 - 1150 MHz
.15 WATTS (typ.) TACAN 960 - 1215 MHz
.10 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMITTER BALLASTING AND LOW
THERMAL RESISTANCE
.20:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.INPUT MATCHED, COMMON BASE
CONFIGURATION
DESCRIPTION
The SD1528-08 is a gold metallized, silicon NPN
power transistor. The SD1528-08 is designed for
applications requiring high peak power and low
duty cycles such as IFF, DME and TACAN. The
SD1528-08 is packaged in the .250” input matched
hermetic stripline flange package resulting in im-
proved broadband performance and a low thermal
resistance.
PIN CONNECTION
BRANDING
1528-8
ORDER CODE
SD1528-08
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
°
C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
V
CEO
Collector-Emitter Voltage 65 V
V
EBO
Emitter-Base Voltage 3.5 V
IC Device Current 1.5 A
PDISS Power Dissipation 87.5 W
T
J
Junction Temperature +200
°
C
T
STG
Storage Temperature − 65 to +150
°
C
RTH(j-c) Junction-Case Thermal Resistance 2.0 °C/W
SD1528-08
1. Collector 3. Emitter
2. Base
THERMAL DATA
November 1992
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