1528-6资料PDF,1528-6功能介绍,Datasheet由STMICROELECTRONICS公司出品

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1528-6
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS 器件厂商：STMICROELECTRONICS [STMicroelectronics] 厂商主页：http://www.st.com/ 文件大小：44.29KB 文件页数：4 PDF阅读：1528-6.pdf (点击阅读器件资料) 摘要： AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS .280 4 LFL (M115) epoxy sealed .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .20 W (typ.) IFF 1030 - 1090 MHz .15 W (min.) DME 1025 - 1150 MHz .15 W (typ.) TACAN 960 - 1215 MHz .REFRACTORY GOLD METALLIZATION .EMITTER BALLASTED AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS .20:1 LOAD VSWR CAPABILITY @ SPECIFIED OPERATING CONDITIONS .INPUT MATCHED, COMMON BASE CONFIGURATION DESCRIPTION The SD1528-06 is a gold metallized epitaxial silicon NPN power transistor. The SD1528-06 is designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1528-06 is packaged in the .280” input matched stripline package, resulting in improved broadband performance and low thermal resist- ance. PIN CONNECTION BRANDING 1528-6 ORDER CODE SD1528-06 ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V V CES Collector-Emitter Voltage 65 V V EBO Emitter-Base Voltage 3.5 V IC Device Current 1.5 A PDISS Power Dissipation 87.5 W T J Junction Temperature +200 ° C T STG Storage Temperature ? 65 to +150 ° C RTH(j-c) Junction-Case Thermal Resistance 2.0 °C/W SD1528-06 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA November 1992 1/4 相关器件：SD1528-06

1528-6

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：44.29KB
文件页数：4
PDF阅读：1528-6.pdf (点击阅读器件资料)

摘要：
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 4 LFL (M115)
epoxy sealed
.DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
.20 W (typ.) IFF 1030 - 1090 MHz
.15 W (min.) DME 1025 - 1150 MHz
.15 W (typ.) TACAN 960 - 1215 MHz
.REFRACTORY GOLD METALLIZATION
.EMITTER BALLASTED AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.20:1 LOAD VSWR CAPABILITY @
SPECIFIED OPERATING CONDITIONS
.INPUT MATCHED, COMMON BASE
CONFIGURATION
DESCRIPTION
The SD1528-06 is a gold metallized epitaxial silicon
NPN power transistor. The SD1528-06 is designed
for applications requiring high peak power and
low duty cycles such as IFF, DME and TACAN.
The SD1528-06 is packaged in the .280” input
matched stripline package, resulting in improved
broadband performance and low thermal resist-
ance.
PIN CONNECTION
BRANDING
1528-6
ORDER CODE
SD1528-06
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°
C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
V
CES
Collector-Emitter Voltage 65 V
V
EBO
Emitter-Base Voltage 3.5 V
IC Device Current 1.5 A
PDISS Power Dissipation 87.5 W
T
J
Junction Temperature +200
°
C
T
STG
Storage Temperature ? 65 to +150
°
C
RTH(j-c) Junction-Case Thermal Resistance 2.0 °C/W
SD1528-06
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
November 1992
1/4

相关器件：SD1528-06

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